kw.\*:("AUGER RECOMBINATION")
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AUGER RECOMBINATION RATE IN INGAASP LASERSBURT MG.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 806-807; BIBL. 12 REF.Article
ESTIMATION OF SECOND-ORDER AUGER RECOMBINATION IN LEAD CHALCOGENIDESZIEP O.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 115; NO 1; PP. 161-170; ABS. GER; BIBL. 20 REF.Article
THE EQUIVALENCE OF TWO RECENT AUGER RECOMBINATION RATE CALCULATIONSROBBINS DJ; YOUNG A.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 102; NO 2; PP. K143-K147; BIBL. 5 REF.Article
RECOMBINAISON AUGER DANS LE GERMANIUMAKULINICHEV VV.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 6; PP. 1197-1200; BIBL. 7 REF.Article
AUGER RECOMBINATION IN A QUANTUM WELL HETEROSTRUCTURESMITH C; ABRAM RA; BURT MG et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 5; PP. L171-L175; BIBL. 8 REF.Article
EFFECTS OF AUGER RECOMBINATION PROCESS ON LASER DYNAMICSOTSUKA K; KUBODERA K.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 5; PP. 538-541; BIBL. 8 REF.Article
CARACTERISTIQUES PHOTOELECTRIQUES ET DE RECOMBINAISON D'UN PHOTOMELANGEUR A BASE DE CDHGTELILENKO YU V.1980; IZV. VYSS. UCEBN. ZAVED., FIZ.; ISSN 0021-3411; SUN; DA. 1980; VOL. 23; NO 7; PP. 100-103; BIBL. 7 REF.Article
INTERBAND AUGER RECOMBINATION IN INGAASPCHIU LC; CHEN PC; YARIV A et al.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 6; PP. 938-941; BIBL. 20 REF.Article
MEASUREMENT OF RADIATIVE AND AUGER RECOMBINATION RATES IN P-TYPE INGAASP DIODE LASERSSU CB; SCHLAFER J; MANNING J et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 4; PP. 595-596; BIBL. 6 REF.Article
BAND-TO-BAND AUGER EFFECT IN GASB AND INAS LASERSSUGIMURA A.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4405-4411; BIBL. 33 REF.Article
RECOMBINAISON AUGER DANS SI AUX BASSES TEMPERATURESDELIMOVA LA.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1349-1352; BIBL. 19 REF.Article
PHOTOCONDUCTIVITE DU MONOSELENIURE D'INDIUM AUX NIVEAUX D'EXCITATION OPTIQUE ELEVESABDULLAEV GB; TAGIROV VI; KYAZYM ZADE AG et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 11; PP. 2228-2232; BIBL. 8 REF.Article
IMPACT IONIZATION BY ELECTRIC FIELDS IN INTRINSIC INDIUM-ANTIMONIDE.BRUHNS H; HUBNER K.1977; Z. PHYS. B; DTSCH.; DA. 1977; VOL. 26; NO 3; PP. 227-232; BIBL. 11 REF.Article
THEORY OF INTRINSIC RECOMBINATION AT ZERO TEMPERATURE IN SMALL GAP SEMICONDUCTORS. ESTIMATIONS FOR PBSSEMOCKER M; BEILER M.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 116; NO 1; PP. 205-215; ABS. GER; BIBL. 13 REF.Article
ETUDE DE LA RECOMBINAISON AUGER DES STRUCTURES A COUCHES MULTIPLES EN SILICIUM POUR UNE DENSITE DE COURANT ELEVEEKUZ'MIN VA; MNATSAKANOV TT; POMORTSEVA LI et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 6; PP. 988-992; BIBL. 18 REF.Article
IMPACT IONISATION AND AUGER RECOMBINATION INVOLVING TRAPS IN SEMICONDUCTORSROBBINS DJ; LANDSBERG PT.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 12; PP. 2425-2439; BIBL. 48 REF.Article
ETUDE DES VARIATIONS THERMIQUES DE LA DUREE DE VIE LINEAIRE, DU RENDEMENT D'EMETTEUR ET DU COEFFICIENT DE RECOMBINAISON AUGER D'APRES LA DUREE DU PROCESSUS TRANSITOIRE DE COMMUTATION D'UNE DIODE AU SILICIUMGREKHOV IV; KOROBKOV NN; OTBLESK AE et al.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 2; PP. 319-324; BIBL. 23 REF.Article
RECOMBINAISON AUGER DANS LE SILICIUMABAKUMOV VN; YASSIEVICH IN.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 7; PP. 1302-1310; BIBL. 9 REF.Article
AUGER RECOMBINATION IN PBTE.LISCHKA K; HUBER W.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2632-2633; BIBL. 10 REF.Article
EFFET PHOTOMAGNETOELECTRIQUE DANS LES SEMICONDUCTEURS FORTEMENT EXCITES DANS LES CONDITIONS DE RECOMBINAISON AUGERTAMASHYAVICHYUS AV; SHATKOVSKIJ EV.1979; LITOV. FIZ. SBOR.; SUN; DA. 1979; VOL. 19; NO 1; PP. 77-83; ABS. LIT/ENG; BIBL. 11 REF.Article
A DIRECT CALCULATION OF OVERLAP INTEGRALS AND THE AUGER RECOMBINATION COEFFICIENT IN GAPDZWIG P.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 10; PP. 1809-1818; BIBL. 14 REF.Article
DOMINANCE OF AUGER RECOMBINATION IN INGAASP LIGHT EMITTING DIODE CURRENT POWER CHARACTERISTICSUJI T; IWAMOTO K; LANG R et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 316-320; BIBL. 22 REF.Article
MINORITY-CARRIER LIFETIME IN GOLD-DIFFUSED SILICON AT HIGH CARRIER CONCENTRATIONSSCHMID W; REINER J.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6250-6252; BIBL. 9 REF.Article
RECOMBINATION MECHANISM IN HEAVILY DOPED SILICONHAUG A; SCHMID W.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 7; PP. 665-667; BIBL. 22 REF.Article
RECOMBINATION IN A-SI:H: AUGER EFFECTS AND NONGEMINATE RECOMBINATIONSTREET RA.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 2; PP. 861-868; BIBL. 19 REF.Article